BC807-16-F [BL Galaxy Electrical]
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, PLASTIC PACKAGE-3;型号: | BC807-16-F |
厂家: | BL Galaxy Electrical |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, PLASTIC PACKAGE-3 晶体 晶体管 |
文件: | 总4页 (文件大小:411K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
PNP General Purpose Amplifier
BC807-16/-25/-40
FEATURES
Pb
Lead-free
z
Ideally suited for automatic insertion.
Complementary NPN type available
BC817
z
z
Epitaxial planar die construction.
APPLICATIONS
z
This device is designed for general purpose amplifier
and switching applications at currents to1.0A.
SOT-23
ORDERING INFORMATION
Type No.
Marking
Package Code
BC807-16
BC807-25
BC807-40
5A1
5B
5C
SOT-23
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
-50
Collector-Emitter Voltage
Emitter-Base Voltage
-45
V
-5
V
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
-500
300
mA
mW
℃/W
℃
PD
RθjA
Tj,Tstg
375
-55to+150
Document number: BL/SSSTC041
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
PNP General Purpose Amplifier
BC807-16/-25/-40
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA IE=0
-50
V
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA IB=0
-45
-5
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IE=-1μA IC=0
μV
-0.1 μA
-0.2 μA
-0.1 μA
VCB=-45V IE=0
VCE=-40V IB=0
VCE=-4V IC=0
ICEO
IEBO
DC current gain
807-16
807-25
807-40
100 250
160 400
250 600
hFE
VCE=-1V IC=-100mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
IC=-500mA IB=-50mA
IC=-500mA IB=-50mA
-0.7
-1.2
V
V
VBE(sat)
VCE=-5V
IC=-10mA
Transition frequency
fT
100
MHz
f=100MHz
Document number: BL/SSSTC041
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
PNP General Purpose Amplifier
BC807-16/-25/-40
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC041
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
PNP General Purpose Amplifier
BC807-16/-25/-40
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
K
B
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
G
H
J
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
BC807-16/-25/-40
3000/Tape&Reel
Document number: BL/SSSTC041
Rev.A
www.galaxycn.com
4
相关型号:
BC807-16-TAPE-13
TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC807-16-TAPE-7
TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC807-16/T3
TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP
BC807-16D87Z
Small Signal Bipolar Transistor, 1.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
FAIRCHILD
BC807-16E6327
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BC807-16E6433
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
©2020 ICPDF网 联系我们和版权申明